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| NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead (Pb) Free Product - RoHS Compliant BPX 43 Wesentliche Merkmale * Speziell geeignet fur Anwendungen im Bereich von 450 nm bis 1100 nm * Hohe Linearitat * Hermetisch dichte Metallbauform (TO-18) mit Basisanschluss, geeignet bis 125 C * Gruppiert lieferbar Anwendungen * Lichtschranken fur Gleich- und Wechsellichtbetrieb * Industrieelektronik * Messen/Steuern/Regeln" Features * Especially suitable for applications from 450 nm to 1100 nm * High linearity * Hermetically sealed metal package (TO-18) with base connection suitable up to 125 C * Available in groups Applications * Photointerrupters * Industrial electronics * For control and drive circuits Typ Type BPX 43 BPX 43-3/4 1) BPX 43-4 BPX 43-4/5 1) BPX 43-5 1) Bestellnummer Ordering Code Q62702P0016 Q62702P3581 Q62702P0016S004 Q62702P3582 Q 62702P0016S005 Fotostrom , Ee= 0.5 mW/cm2, = 950 nm, VCE = 5 V Photocurrent Ipce (mA) > 0.8 1.25...4.0 2.0...4.0 > 2.0 > 3.2 nur eine Gruppe in einer Verpackungseinheit (siehe "Kennwerte") / only one bin within one packing unit (see "Characteristics") 2007-04-02 1 BPX 43 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, < 10 s Collector surge current Emitter-Basisspannung Emitter-base voltage Verlustleistung, TA = 25 C Total power dissipation Warmewiderstand Thermal resistance Symbol Symbol Wert Value - 40 ... + 125 50 50 200 7 220 450 Einheit Unit C V mA mA V mW K/W Top; Tstg VCE IC ICS VEB Ptot RthJA 2007-04-02 2 BPX 43 Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Parameter Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der Chipflache Dimensions of chip area Halbwinkel Half angle Fotostrom der Kollektor-Basis-Fotodiode Photocurrent of collector-base photodiode Ee = 0.5 mW/cm2, VCB = 5 V Ev = 1000 Ix, Normlicht/standard light A, VCB = 5 V Kapazitat Capacitance VCE = 0 V, f = 1 MHz, E = 0 VCB = 0 V, f = 1 MHz, E = 0 VEB = 0 V, f = 1 MHz, E = 0 Dunkelstrom Dark current VCE = 25 V, E = 0 Symbol Symbol S max Wert Value 880 450 ... 1100 Einheit Unit nm nm A LxB LxW 0.675 1x1 15 mm2 mm x mm Grad deg. IPCB IPCB 11 35 A A CCE CCB CEB ICEO 23 39 47 20 ( 100) pF pF pF nA 2007-04-02 3 BPX 43 Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Parameter Symbol Symbol -2 Fotostrom, = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V IPCE Ev = 1000 Ix, Normlicht/standard light A, IPCE VCE = 5 V Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k Kollektor-Emitter-Sattigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) x 0.3 Ee = 0.5 mW/cm2 Stromverstarkung Current gain Ee = 0.5 mW/cm2, VCE = 5 V 1) 1) Wert Value -3 -4 -5 Einheit Unit 0.8 ...1.6 1.25 ...2.5 2.0...4.0 3.2 3.8 6.0 9.5 15.0 9 12 15 18 mA mA s tr , t f VCEsat 200 220 240 260 mV I PCE ----------I PCB 110 170 270 430 - IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe. IPCEmin is the min. photocurrent of the specified group. 2007-04-02 4 BPX 43 Relative Spectral Sensitivity Srel = f () Photocurrent IPCE = f (Ee), VCE = 5 V Total Power Dissipation Ptot = f (TA) Output Characteristics IC = f (VCE), IB = Parameter Output Characteristics IC = f (VCE), IB = Parameter Dark Current ICEO = f (VCE), E = 0 Photocurrent IPCE/IPCE25o = f (TA), VCE = 5 V Dark Current ICEO/ICEO25o = f (TA), VCE = 25 V, E = 0 Collector-Emitter Capacitance CCE = f (VCE), f = 1 MHz, E = 0 2007-04-02 5 BPX 43 Collector-Base Capacitance CCB = f (VCB), f = 1 MHz, E = 0 Emitter-Base Capacitance CEB = f (VEB), f = 1 MHz, E = 0 Directional Characteristics Srel = f () 2007-04-02 6 BPX 43 Mazeichnung Package Outlines Chip position Radiant sensitive area o4.8 (0.189) o4.6 (0.181) (2.7 (0.106)) o0.45 (0.018) 3) .04 5) (0 03 1.1 (0. 0.9 EC B 0.9 14.5 (0.571) 12.5 (0.492) 5.1 (0.201) 4.8 (0.189) 6.2 (0.244) 5.4 (0.213) (0 (0 .03 .04 5) 3) o5.6 (0.220) o5.3 (0.209) GMOY6019 Mae in mm (inch) / Dimensions in mm (inch) 2007-04-02 7 2.54 (0.100) spacing 1.1 BPX 43 Lotbedingungen Soldering Conditions Wellenloten (TTW) TTW Soldering 300 C T 250 235 C ... 260 C 2. Welle 2. wave 200 1. Welle 1. wave 150 100 C ... 130 C 100 2 K/s 50 Zwangskuhlung forced cooling ca 200 K/s 5 K/s 2 K/s (nach CECC 00802) (acc. to CECC 00802) OHLY0598 10 s Normalkurve standard curve Grenzkurven limit curves 0 0 50 100 150 t 200 s 250 Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2007-04-02 8 |
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